News

Work on strain effects on n-type doping in AlN was recognized

Bai-Qing Zhao and Haochen Wang received awards to attend the Global Physics Summit of the American Physical Society

A more stable telecom-band quantum defect in silicon, the CN center, could enable scalable quantum networking.

Dr. Bai-Qing Zhao received an “Outstanding Postdoctoral Researcher Award” from the Solid State Lighting and Energy Electronics Center (SSLEEC) 

The Award recognizes "outstanding research in the area of III-V compound semiconductors".

Dr. Woncheol Lee and Haochen Wang received travel awards from 2025 APS March Meeting.

The Dow Lectureship for Research Excellence and Societal Impact was endowed by the Dow Chemical Company to highlight the critical role that materials play in advancing technologies

Computational studies illuminate the path to superior electro-optic performance in AlScN alloys

Haochen Wang received an “Outstanding Graduate Student Award ” from the Solid State Lighting and Energy Electronics Center (SSLEEC) “for outstanding modeling of AlScN”.

The Prize recognizes his work in the “development and application of first-principles methods for computing the structural, electronic, and optoelectronic properties of point defects and interfaces.”